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Transistors

transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.Transistors are fundamentally three-terminal devices. On a bi-polar junction transistor (BJT), those pins are labeled collector (C), base (B), and emitter (E). The circuit symbols for both the NPN and PNP BJT are below: The only difference between an NPN and PNP is the direction of the arrow on the emitter.

BFW10 N-Channel JFET VHF/UHF Amplifier
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Model: TPS-00600
BFW10 N-Channel JFET VHF/UHF amplifierSPECIFICATIONS:N-Channel VHF/UHF AmplifierDrain-Source Voltage: 30VDrain-Gate Voltage: 30VTotal Power Dissipation: 300mWDrain Current: 20mAPackage: TO-72(TO-206A)..
₹120.00
Model: TPS-01596
BFW61 N-Channel FET-TO-72 PackageSPECIFICATIONS:                                      Drain-source voltage max  2..
₹125.00
Model: TPS-00551
BS170 N-Channel MOSFET-TO-92 Plastic Package Specifications   Mounting Style:                           ..
₹35.00
FGA15N120 1200V NPT Trench IGBT Transistor (Replacement for Induction Cooktop)
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Model: TPS-01854
Features High Voltage IGBT with low saturation voltageCollector-Emitter Voltage (VCE): 1200VCollector Current (IC): 30A @25°C..
₹105.00
H20R1203 Induction Cooker high Power Tube IGBT
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Model: TPS-01860
Product description Package:TO-247Model Number H20R1203 Application:Induction cooker high power tube IGBT  ..
₹110.00
Model: TPS-01910
Aluminum Heat SinkHeatsink for Multiwatt15 V PackageHeatsink for L298 Motor Driver IC  Multiwatt15 V PackageSize - 23mm X 16mm X 22mm (LXBXH)..
₹7.00
Heatsink for TO-220 Package
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Model: TPS-00397
Aluminum Heat Sink For TO-220 Mosfet Transistors, Power IC, Voltage RegulatorSize: 21x15x11mm..
₹6.00
Model: TPS-01533
Aluminium Heatsink for metal transistorTO-39 package..
₹20.00
Model: TPS-00757
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Features • 5.6A, 100V •rdS(ON) = 0.540 • Single Pulse Avalanch..
₹50.00
Model: TPS-01178
IRF530 14A,100V N-Channel Power MOSFET:These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Features • 14A, 100V •r..
₹30.00
Model: TPS-00527
IRF540 MOSFET N-Channel Power MOSFETsDescription:These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation...
₹25.00
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