A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.Transistors are fundamentally three-terminal devices. On a bi-polar junction transistor (BJT), those pins are labeled collector (C), base (B), and emitter (E). The circuit symbols for both the NPN and PNP BJT are below: The only difference between an NPN and PNP is the direction of the arrow on the emitter.
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation.
Features
• 5.6A, 100V
•rdS(ON) = 0.540
• Single Pulse Avalanch..
IRF530 14A,100V N-Channel Power MOSFET:These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Features
• 14A, 100V
•r..
IRF540 MOSFET N-Channel Power MOSFETsDescription:These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation...
IRF9540N MOSFET P-Channel Power MOSFETsDescription:Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ..
5 pcs each of2N39042N3906BC547BC548BC557BC558BF494BD139BD140S8050A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage o..