IRF530 14A, 100V N-Channel Power MOSFETs - High-Performance Transistors for Robust Power Management in Electronic Projects

IRF530 14A,100V N-Channel Power MOSFET:

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features
• 14A, 100V
•rDS(ON)= 0.160
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”