IRF510 MOSFET N-Channel Power MOSFETs

Stock: 1
Model: TPS-00757 (HSN CODE 8542)
Weight: 2.00g

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This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation.

Features
• 5.6A, 100V
•rdS(ON) = 0.540
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”