Features
Collector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 50VCollector Current (Ic): 0.15Ahfe: 60-600 @ 1mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..
ST13005 - Switch mode NPN Power TransistorsThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationssuch as Switching Regulator’s, Inverters, Motor Controls,Solenoid/Rel..
ST13007 High voltage fast-switching NPN power transistorFeatures■ DC current gain classification■ High voltage capability■ Low spread of dynamic parameters■ Very high switching speed..
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices.Features High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 AdcCollector-Emitter Sustainin..
Introduction
The TIP35C is general purpose NPN power transistor. It has maximum
VCE rated at 100V and can sink maximum current of 25A. It has typical
power dissipation of 125W. It has typical gain of 25.
Specifications
Maximum VCE : 100VMaximum collector current: 25ATypical Gain: 2..
SpecificationsAttributeValueTransistor TypePNPMaximum DC Collector Current25 AMaximum Collector Emitter Voltage100 VPackage TypeTO-247Mounting TypeThrough HoleMaximum Power Dissipation125 WMinimum DC Current Gain10Transistor ConfigurationSingleMaximum Collector Base Voltage100 VMaximum Emitter Base ..