Memory ICs

Two-wire Serial EEPROM Features • Low-voltage and Standard-voltage Operation – 2.7 (VCC = 2.7V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) • Internally Organized 256 x 8 (2K) • Two-wire Serial Interface • Schmitt Trigger, Filtered Inputs for Noise Suppression • Bidirectional Data Transfer Protocol • 100 kHz (1.8V) and 400 kHz (2.7V, 5V) Compatibility • Write Protect Pin for Hardware Data Prote..

Two-wire Serial EEPROM Features • Low-voltage and Standard-voltage Operation – 2.7 (VCC = 2.7V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) • Internally Organized 512 x 8 (4K) • Two-wire Serial Interface • Schmitt Trigger, Filtered Inputs for Noise Suppression • Bidirectional Data Transfer Protocol • 100 kHz (1.8V) and 400 kHz (2.7V, 5V) Compatibility • Write Protect Pin for Hardware Data Prote..

Serial CMOS EEPROM Low Voltage and Standard-Voltage Operation 2-wire Serial Interface Schmitt Trigger, Filtered Inputs for Noise Suppression Bi-directional Data Transfer Protocol 100kHz and 400kHz Compatibility Write Protect Pin for Hardware Data Protection 8-byte Page (1K, 2K), 16-byte Page (4K, 8K, 16K) Write Modes Partial Page Writes are Allowed Self-timed Write Cycle (10mS max) ..

2-Wire Serial EEPROM Features • Low-Voltage and Standard-Voltage Operation – 2.7 (VCC = 2.7V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) • Low-Power Devices (ISB = 2 µA at 5.5V) Available • Internally Organized 4096 x 8 • 2-Wire Serial Interface • Schmitt Trigger, Filtered Inputs for Noise Suppression • Bidirectional Data Transfer Protocol • 100 kHz (1.8V, 2.5V, 2.7V) and 400 kHz (5V) Clock Ra..

2-Wire Serial EEPROM Features • Low-Voltage and Standard-Voltage Operation – 2.7 (VCC = 2.7V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) • Low-Power Devices (ISB = 2 µA at 5.5V) Available • Internally Organized 8192 x 8 • 2-Wire Serial Interface • Schmitt Trigger, Filtered Inputs for Noise Suppression • Bidirectional Data Transfer Protocol • 100 kHz (1.8V, 2.5V, 2.7V) and 400 kHz (5V) Clock Ra..

CMOS Serial EEPROM Features: • Single Supply with Operation Down to 1.7V for 24AA256 and 24FC256 Devices, 2.5V for 24LC256 Devices • Low-Power CMOS Technology: - Read current: 400 uA max. at 5.5V, 400 kHz - Standby current: 1 uA max. at 3.6V, I-temp • 2-Wire Serial Interface, I2C™ Compatible • Cascadable up to Eight Devices • Schmitt Trigger Inputs for Noise Suppression • Output Slope..

Serial EEPROM Features: • Single Supply with Operation down to 1.7V for   24AA32A Devices, 2.5V for 24LC32A Devices • Low-Power CMOS Technology: - Active current 1 mA, typical - Standby current 1 mA, typical • 2-Wire Serial Interface, I2C™ Compatible • Schmitt Trigger Inputs for Noise Suppression • Output Slope Control to Eliminate Ground Bounce • 100 kHz and 400 kHz Clock Compat..

512K I2C™ Serial EEPROM Features: • Single Supply with Operation down to 1.7V for   24AA512 and 24FC512 Devices, 2.5V for   24LC512 Devices • Low-Power CMOS Technology: - Active current 400 uA, typical - Standby current 100 nA, typical • 2-Wire Serial Interface, I2C™ Compatible • Cascadable for up to Eight Devices • Schmitt Trigger Inputs for Noise Suppression • Output Slope..

3-wire Automotive Temperature Serial EEPROM    2K  (256 x 8 or 128 x 16) Features  Medium-voltage and standard-voltage operation VCC = 2.5V to 5.5V Automotive temperature range –40C to 125C User-selectable internal organization 2K: 256 x 8 or 128 x 16 3-wire serial interface Sequential Read operation 2MHz clock rate Self-timed ..

DESCRIPTIONThe HY62256A is a high-speed, low power and32,786 x 8-bitsCMOS Static Random Access Memory fabricated using Hyundai'shigh performance CMOS process technology. The HY62256A has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using theCMOS technology, supply voltages from 2.0 to 5.5volt has little effect on supply ..

8Kx8-bit CMOS SRAM Features High speed 70/85/100/120/150ns (max.)Fully static operation and Tri-state outputsTTL compatible inputs and outputsLow power consumption 2V min (4.5V - 5.5V)28 pin 600 mil PDIP ..